Abstract

We have developed a 22um pitch and 320 × 240 pixel uncooled infrared radiation focal plane array on the silicon-oninsulator (SOI) substrate by means of 0.35um CMOS technology and bulk-micromachining. For IR detection, we use silicon single-crystal series p-n junctions that can realize high uniformity of sensitivity and low voltage drift. The supporting beam shrinkage enabled the pixel pitch shrinkage from 32um to 22um and 320 × 240 pixel number without deteriorating NETD. We also developed a SOI low-noise CMOS readout circuit that can calibrate chip temperature and introduced a noise canceling digital algorithm to cancel the reset noise generated in the readout circuit. The dominant noise source, SOI MOSFET noise, was decreased by optimizing the gate design. Finally the FPA has realized noise equivalent temperature difference (NETD) of 0.12K and requires no thermo-electric cooler (TEC) and is mounted on a low-cost standard ceramic package.

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