Abstract
A THz voltage-controlled oscillator (VCO) has been developed in this work based on a 0.25- μm InP heterojunction bipolar transistor (HBT) technology. The cross-coupled push-push oscillator adopted a novel coupled-line topology, in which the DC blocking capacitors and the load inductance are replaced by a pair of coupled-lines to improve the oscillation frequency and reduce the circuit area. Also, a base bias tuning was employed for effective oscillation frequency tuning. The circuit exhibited the voltage tuning from 309.5 GHz to 339.5 GHz, leading to a tuning range of 30 GHz. The maximum output power was -6.5 dBm at 334 GHz, achieved with a dc power consumption of 13.5 mW. Measured phase noise was -86.55 at 10-MHz offset. The circuit occupies only 0.014 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> excluding the probing pads.
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