Abstract
The fabrication technology is developed for and characteristics are investigated of a GaAs Schottky-barrier field-effect transistor (SBFET) with an effective gate length of 30 nm. The SBFET power gain cutoff frequency is 150 GHz. The noise factor at 12–37 GHz is comparable with that of two-dimensional electron gas transistors. The theoretical electron transit time under the gate is below 0.1 ps.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
