Abstract
A 3-D simulator named SEAES has been presented for silicon anisotropic etching process simulation based on a novel 3-D continuous cellular automata (CA) model. The boundary conditions are greatly simplified in the top-most layer and high index planes such as <311> plane can be efficiently incorporated into the novel 3-D continuous CA model. The simulator is friendly and convenient for various users. The anisotropic etching can be efficiently simulated for different conditions such as etchant temperature, etchant concentration and substrate doping concentration, and the simulation results by SEAES are in good agreement with the experimental results.
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