Abstract
An analytical physically based analysis for undoped FinFET devices in the subthreshold and near-threshold regimes has been developed by solving the 3-D Poisson equation, in which the mobile-charge term was included. From this analysis, a subthreshold-swing model has been developed; this model is also based on a new physically based analysis of the conduction path. The subthreshold-swing model has been verified by comparison with 3-D numerical simulations and measured values; a very good agreement with both 3-D numerical simulation and the experimental results was observed.
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