Abstract
This paper presents a 3.4–3.6 GHz power amplifier (PA) designed and implemented in InGaP/GaAs HBT technology. By optimizing the off-chip output matching network and designing an extra input-matching circuit on the PCB, several problems are resolved, such as resonant frequency point migration, worse matching and lower gain caused by parasitics inside and outside of the chip. Under Vcc = 4.3 V and Vbias = 3.3 V, a P1dB of 27.1 dBm has been measured at 3.4 GHz with a PAE of 25.8%, the 2nd and 3rd harmonics are −64 dBc and −51 dBc, respectively. In addition, this PA shows a linear gain more than 28 dB with S11 < −12.4 dB and S22 < −7.4 dB in 3.4–3.6 GHz band.
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