A 3.2-3.8 GHz low-noise amplifier for 5G/6G satellite-cellular convergence applications

Abstract

The rapid evolution of wireless communication systems towards 5G standards has imposed stringent requirements on the performance of radio frequency front-end components. Among these, the Low-Noise Amplifier (LNA) plays a pivotal role in determining the overall noise figure and sensitivity of the receiver chain. This paper presents a comprehensive design and analysis of a 3.2-3.8 GHz LNA tailored for 5G applications, employing a 0.3 μmm gate length Gallium Arsenide (GaAs) pseudomorphic high electron transistor (pHEMT) technology process. The proposed LNA design focuses on achieving a low noise figure (NF), high gain, and robust linearity to accommodate the dense signal environment and wide bandwidth of 5G networks. The design leverages advanced matching networks and feedback topologies to enhance stability and reduce the noise contribution from the active devices. Simulation results predict a noise figure of 1.3-1.4 dB, a gain of 20-21 dB across the band of interest, and an input-referred third-order intercept point (IIP3) of 18 dBm. The LNA demonstrates excellent performance in a 5G testbed, showing a significant improvement in the signal-to-noise ratio and the potential to enhance 5G receiver sensitivity. The research substantiates the LNA’s viability for integration into 5G base stations and user equipment, underscoring its potential to contribute to the efficient and reliable operation of next-generation wireless networks. This LNA can be used for 5G New Release (NR) band of n77 and n78 (3.5-3.7 GHz)