A 3–10 GHz CMOS low‐noise amplifier using wire bond inductors

Abstract

AbstractIn this article, a small‐sized 3–10 GHz CMOS LNA for ultra‐wideband (UWB) applications is presented. To reduce 2 on‐chip inductors, wire bond inductors are used instead of input inductor of multisectional reactive network and source degeneration inductor. The noise figure of low‐noise amplifier (LNA) is 4 dB at minimum and IIP3 + 1.1 dBm at 5 GHz, respectively. The current consumption is 4 mA at 1.8 V supply. The LNA chip size including pads is 1 mm × 1 mm. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 414–416, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24082