Abstract
We present new results from the characterisation of a fully depleted 2048-row by 2048-column (2K×2K) CCD on high resistivity silicon. The CCD was fabricated at the Lawrence Berkeley National Laboratory (LBNL). This device represents a one hundred-fold increase in CCD size compared to devices previously made at LBNL. The large CCD size allows us to do accurate charge transfer efficiency measurements. A two-layer antireflection coating is modelled and compared with laboratory measurements of both quantum efficiency and reflectivity.KeywordsQuantum EfficiencyLawrence Berkeley National LaboratoryCharge CloudPolysilicon LayerCharge Transfer EfficiencyThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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