A 28GHz RF Phase Shifter with High Phase Resolution in 180-nm CMOS Technology

Abstract

This paper presents a Ka-band passive phase shifter in 180-nm CMOS technology. To take advantage of compact size and low insertion loss from switched type phase shifter and high resolution from transmission line type phase shifter, a combination of these two types has been proposed. The post layout simulation shows this 12-bit phase shifter can offer 182° coverage with 4.9° resolution at 28GHz while its total insertion loss is 9.66±0.7 dB and the RMS phase error is 0.5° only. Moreover, it exhibits better than 17 dBm P1dB and occupies 0.734 mm2 area, demonstrating competitive overall performance compared with literature.