Abstract

A broadband RFIC power amplifier covering 2.5 to 2.7 GHz band and targeting LTE small-cell applications has been implemented through GaAs HBT technology. To meet high linearity requirements of LTE small-cell applications, the proposed linearization bias circuit has the characteristics of gain and phase compensations for the proposed power amplifier. The power amplifier achieves 1-dB compression point (P1dB) of 32.2 dBm and the power-added efficiency (PAE) at P1dB of 39.7%. When the proposed power amplifier is tested with standard LTE 20 MHz signal, the obtained −47 dBc adjacent channel leakage ratio (ACLR) compliant output power and PAE are 25.6 dBm and 17.2 %, respectively.

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