Abstract
In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-µm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.
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