A 2.5D mm-size Wafer-level CMOS-IPD Wireless Power Transfer Receiver Using Cross-coupled and Self-biasing Topology for Implantable Biomedical System

Abstract

This work achieves a two-and-a-half-dimensional (2.5D) wafer-level mm-size rectenna module with a compact size and high power conversion efficiency (PCE) that integrates a receiver (RX) coil in an integrated passive device (IPD), a rectifier and low-dropout regulator (LDO) in a tsmc™ 0.18 μm CMOS process. The proposed rectifier provides a cross-coupled voltage doubling full-wave topology which can reach relatively high PCE by means of a relatively simple circuitry. The IPD RX coil was stacked on top of the CMOS rectifier and LDO. The PCE of the rectifier maintain 80 % with 8 dB extension input power. The rectifier achieves a 2.5 V output voltage with a transmission distance equal to 2 cm, The die size of the rectenna module is 89 mm2.