A 2.5 V switched-current sigma-delta modulator with a novel class AB memory cell

Abstract

This paper presents a second-order Sigma-Delta Modulator (SDM) with a novel switched-current class AB memory cell. The benefits of the proposed memory cell such as high input dynamic range, high linearity, signal-independent settling behavior, and low power consumption, are importantly introduced. The SDM is simulated with TSMC 0.35 /spl mu/m IP4M standard CMOS process technology, therefore the simulation results reveal that the SDM has maximum signal-to-noise/distortion ratio of 69 dB, power consumption of 0.52 mW, and dynamic range of 75 dB from a single 2.5 V power supply.