Abstract
A 25-Gb/s transimpedance amplifier (TIA) is proposed and realised in a 0.18-µm SiGe BiCMOS process. A series-peaking network and a shunt-peaking network are used to increase the bandwidth of the modified TIA. A gain boosting circuit is used to optimize the input-referred noise. The chip occupies an area of 0.8mm2, and consumes 82mW from a 3.3-V supply. The TIA transimpedance gain is ∼ 4.5K ohms. Bite error rate tests indicate that the sensitivity of the fabricated TIA is -13dBm for a date rate of 25.78125-Gb/s (Bit error rate (BER)=10-12, λ=1310nm, ER=4.2dB, and 0.8A/W PD responsivity).
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