A 25–30-GHz Asymmetric SPDT Switch for 5G Applications in 65-nm Triple-Well CMOS

Abstract

This letter presents a novel asymmetric single-pole double-throw (SPDT) triple-well CMOS TRx switch for 5G applications at millimeter-wave (mm-wave) frequencies of 25–30 GHz. In 5G applications, low losses in both TRx modes and high power-handling capability in the transmit mode are required. Hence, we proposed a novel structure in which the transmitter and receiver sides are designed asymmetrically to improve the power-handling capability by using all the transistors in the ON-state when in the transmit mode. The proposed TRx SPDT switch is fabricated using the 65-nm triple-well CMOS process and operates in the frequency range of 25–30 GHz with less than 1.16-dB insertion loss in both TRx modes. When in the transmit mode, the measurement result of IP1 dB is 31.8 dBm at 28 GHz. The measurement result of input third-order intercept point is 36 dBm at an input power of 5 dBm in the transmit mode, and the core area is 0.14 mm $\times0.31$ mm.