A 24-30GHz GaN-on-Si Variable Gain Low-Noise Amplifier MMIC

Abstract

This paper presents the design of a 24-30GHz variable gain low noise amplifier (VGLNA) with improved gain flatness for 5G millimeter-wave front-ends. Designed with a 100nm GaN- on-Si MMIC technology, the 3-stage VGLNA features with >20dB gain tuning range and ±0.5dB gain flatness over the operating frequency range. At the highest gain level, the noise figure (NF) of the LNA ranges from 0.89 dB and 1.25 dB, with the output and input return loss less than -10 dB. The average P 1dB in the whole band is around 14 dBm. The VGLNA chip occupies 1.5×0.8 mm2, and dissipates 26mW to 361.5 mW DC power at various gain levels.