A 23–29.5 GHz three‐stage mm‐wave GaN power amplifier using arbitrary two‐port complex‐impedance matching method

Abstract

SummaryThis paper presents a broadband monolithic millimeter‐wave integrated circuit GaN power amplifier (PA) with arbitrary two‐port complex‐impedance matching method. The proposed matching topology has been applied to interstage matching network design by modifying traditional coupling matrix and synthesizing a desired network. The optimum load traction technique is introduced to provide some more suitable Zopts. After continuous‐wave test, the three‐stage MMIC PA achieves a peak PAE of 39.1% with a 34.9 dBm output power from 23 to 29.5 GHz and the measured S21 is 32.5 dB with a ±2.5 dB gain variation. When driven by a 400 MHz OFDM modulation signal with a PAPR of 8.5 dB, the measured ACPR is improved to −40.6/−40.7 dBc with DPD. In this case, the PA achieves an average PAE of 11.7% and a 26.7 dBm average output power.