A 210–291-GHz (8×) Frequency Multiplier Chain With Low Power Consumption in 0.13-μm SiGe

Abstract

This letter presents a 210–291-GHz $8\times $ multiplier chain in the 0.13- $\mu \text{m}$ SiGe Bipolar CMOS (BiCMOS) technology for the broadband generation of carrier signals, imaging, and spectroscopy. It consists of three cascaded Gilbert-cell doublers with compact input matching networks to generate quadrature collector currents in the switching quad for broadband flat conversion gain. The multiplier chain generates a saturated output power of −7.7 dBm at 244.5 GHz with a 3-dB bandwidth of 81 GHz. It consumes 0.24 W of dc power and occupies 0.86 mm 2 of chip area.