Abstract
This paper presents the design and implementation of a low-noise amplifier (LNA) for millimeter-wave (mm-Wave) 5G wireless applications. The LNA was based on a common-emitter configuration with cascode amplifier topology using an IHP’s 0.13 μm Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) whose f_T/f_MAX/gate-delay is 360/450 GHz/2.0 ps, utilizing transmission lines for simultaneous noise and input matching. A noise figure of 3.02–3.4 dB was obtained for the entire wide bandwidth from 20 to 44 GHz. The designed LNA exhibited a gain (S_21) greater than 20 dB across the 20–44 GHz frequency range and dissipated 9.6 mW power from a 1.2 V supply. The input reflection coefficient (S_11) and output reflection coefficient (S_22) were below −10 dB, and reverse isolation (S_12) was below −55 dB for the 20–44 GHz frequency band. The input 1 dB (P1dB) compression point of −18 dBm at 34.5 GHz was obtained. The proposed LNA occupies only a 0.715 mm2 area, with input and output RF (Radio Frequency) bond pads. To the authors’ knowledge, this work evidences the lowest noise figure, lowest power consumption with reasonable highest gain, and highest bandwidth attained so far at this frequency band in any silicon-based technology.
Highlights
In the presented low-noise amplifier (LNA) design, an approach consisting in reducing the base resistance (RB ) and choosing the appropriate transistor size and current density is demonstrated to achieve low power consumption and low noise figure with high gain capabilities
Input-matching elements were formed by the transmission lines TL1, TL2, and TL3 and a series Metal Insulator Metal (MIM) capacitor, whereas output-matching elements were formed by the transmission line TL4 and TL5 and a series DC blocking capacitor
The second-stage input-matching elements were formed by the transmission lines TL6, TL7 and TL8 and a series MIM capacitor, whereas the output-matching elements were formed by the transmission line TL9 and TL10 and a series DC blocking capacitor
Summary
Recent technological advancement has made 5G deployment a reality, promoting the growth of mobile data with a wide range of RF (radio frequency) connectivity solutions. The silicon germanium (SiGe) heterojunction bipolar transistor (HBT) has the characteristics of producing very low noise and high gain over a wide bandwidth. Due to these characteristics, SiGe HBTs have seamlessly improved and Micromachines 2021, 12, 1520. In the presented LNA design, an approach consisting in reducing the base resistance (RB ) and choosing the appropriate transistor size and current density is demonstrated to achieve low power consumption and low noise figure with high gain capabilities. The proposed LNA reports the lowest noise figure, lowest power consumption with reasonable highest gain, and highest bandwidth realized so far at this frequency band in any silicon-based technology
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