A 20–42-GHz IQ Receiver in 22-nm CMOS FD-SOI With 2.7–4.2-dB NF and −25-dBm IP1dB for Wideband 5G Systems

Abstract

This article presents a 20–42-GHz in-phase and quadrature (IQ) receiver in 22-nm CMOS fully depleted silicon on insulator (FD-SOI). The receiver includes a wideband low noise variable-gain amplifier (LN-VGA), double-balanced IQ mixers, wideband I/Q generation network and wideband local oscillator (LO) driver, low-pass filters, and wideband intermediate frequency (IF) amplifiers. The measured receiver has a peak conversion gain of 25.3 dB with a 3-dB bandwidth of 19.8–42 GHz and an I and Q bandwidth of 5.7 GHz and covers the 5G millimeter-wave (mm-wave) band. The measured single-sideband noise figure (NF) is 2.7–4.2 dB at 24–42 GHz with an IP1dB of −26 to −23 dBm. The I/Q downconverter consumes a total of 102 mW from 0.8- and 1.6-V supplies. The IP1dB can be improved by 5 dB with an NF degradation by only 1.2 dB using RF VGA gain control. At peak gain and −8-dB VGA setting, the receiver dynamic range is 64–68 dB for a 100-MHz bandwidth, which is very high for low power consumption. The gain and phase mismatch between the I and Q channels is < 0.6 dB and <6°, respectively. To the best of the authors’ knowledge, this is the first wideband I/Q receiver that covers the entire mm-wave 5G band based on GF 22-nm CMOS FD-SOI. The application area is multistandard multigigabit per second communication systems.