A 201- and 283-GHz Dual-Band Amplifier in 65-Nm CMOS Adopting Dual-Frequency $G_{\max }$-Core With Dual-Band Matching

Abstract

This work reports a concurrent dual-band amplifier with an extensive spacing between the two bands by adopting a proposed dual-frequency maximum achievable gain ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$G_{max}$</tex-math></inline-formula> ) core with a dual-band matching. The proposed dual-frequency <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$G_{max}$</tex-math></inline-formula> -core can expand the difference between the two target frequencies by focusing on satisfying dominant gain-boosting condition and adopting a linear, lossy, and reciprocal based design approach. Implemented in a 65 nm CMOS process, a 5-stage dual-band amplifier shows a peak power gain of 23.6 and 13.7 dB, 3 dB bandwidth of 5 and 17 GHz, saturated output power ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$P_{sat}$</tex-math></inline-formula> ) of -1.2 and -2.2 dBm, and peak power added efficiency (PAE) of 2.1 and 1.5 % at 201 and 283 GHz, respectively, while consuming a DC power of 34.5 mW. The proposed amplifier is the first demonstration of the concurrent dual-band amplifier operating at G- (140-220 GHz) and H- (220-325 GHz) bands.