Abstract
We report on the design and characterization of a 200 GHz resistive subharmonic mixer based on a single, multi-channel CVD graphene field effect transistor (G-FET). The device has gate length 0.5 µm and width 2×40 µm. The integrated mixer circuit is implemented in coplanar waveguide (CPW) technology and realized on a 100 µm thick high resistive silicon substrate. The measured mixer conversion loss (CL) is 34 ± 3 dB across 190–210 GHz band with 10 dBm local oscillator (LO) pumping power and the overall minimum CL gives 31.5 dB at 190 GHz.
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