Abstract
In this article, broadband gallium nitride (GaN) high-electron-mobility transistor (HEMT) power amplifier with shunt-feedback and push–pull technique is presented. Shunt-feedback and push–pull realization provide the robust broad bandwidth covering very high frequency and low-frequency ultra high frequency (UHF) bands. The benefit due to the feedback presented in the form of shunt–shunt network on power amplifier module provides the linear and broadband frequency amplification. The push–pull topology provides enhanced efficiency and high power generation along with the cancellation of the second-order distortions and thus helps to compensate for the efficiency degradation from the feedback. These techniques are realized with the help of in-house designed GaN HEMT transistor, which provides high power, good efficiency, and high reliability (bandgap). The prototype was realized in 0.25- $\mu$ m GaN HEMT, operates from 30 to 520 MHz, and dissipates 650 mA of quiescent current from 28-V supply. The power amplifier delivered a saturated output power of >43 dBm and 40% power added efficiency at 20 W output power. The linearity of the amplifier was characterized by the two-tone injection test. The measurement result shows that the third-order intermodulation distortion tones are below $-$ 35 dBc at 35 dBm output power.
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