Abstract
A 1.3- mu m InGaAsP/InP straight-wall mass-transport buried heterostructure (MTBH) laser diode was designed and fabricated to operate over a bandwidth of 20 GHz. The laser when used in a microwave link has an RF insertion loss of 37 dB, an equivalent input noise density of less than -115 dBm/Hz, input power at 1 dB compression greater than 23 dBm and a spurious signal free dynamic range of 97 dB-Hz/sup 2/3/. The wide bandwidth, high dynamic range, and low noise of the laser module were obtained through the design of the package, the subcarrier, and the laser chip. >
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