Abstract
A + 20 dBm power amplifier (PA) for applications in the 60 GHz industrial scientific medical (ISM) band is presented. The PA is fabricated in a 0.13-mum SiGe BiCMOS process technology and features a fully-integrated on-chip RMS power detector for automatic level control (ALC), built-in self test and voltage standing wave ratio (VSWR) protection. The single-stage push-pull amplifier uses center-tapped microstrips for a highly efficient and compact layout with a core area of 0.075 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The PA can deliver up to 20 dBm, which to date, is the highest reported output power at mm-wave frequencies in silicon without the need for power combining. At 60 GHz it achieves a peak power gain of 18 dB, a 1-dB compression (P1dB) of 13.1 dBm, and a peak power-added efficiency (PAE) of 12.7%. The amplifier is programmable through a three-wire serial digital interface enabeling an adaptive bias control from a 4-V supply.
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