Abstract
A three-stage monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) has been fabricated using 0.15- mu m-gate-length, InP-based (AlInAs-GaInAs) high electron mobility transistor (HEMT) technology. The LNA exhibited less than 0.5-dB noise figure and greater than 35-dB gain from 2.25 to 2.5 GHz. The input and output return loss exceeded 15 dB across the band. The results are believed to be the best reported to date for a MMIC amplifier in this frequency range. >
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