Abstract
This letter presents a 2.5 GHz high efficiency high power low phase noise monolithic microwave power oscillator using 0.5- $\mu{\rm m}$ GaAs enhancement- and depletion-mode pseudomorphic high-electron mobility transistor process. The class-E load network with finite dc-feed inductance is adopted in the power oscillators to achieve high efficiency. The shunt capacitance and load resistance of the class-E network can be larger than those of the class-E load network with the large dc-feed inductance. With a dc supply voltage of 4 V, the proposed power oscillator demonstrates a peak efficiency of 53%, a maximum output power of 24.8 dBm, and a minimum phase noise of $-$ 127 dBc/Hz at 1 MHz offset frequency.
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