Abstract
High power GaAs gunn diodes, which were made from wafers grown by Ga-AsCl 3 -N 2 vapor phase epitaxy, have been developed in the millimeter wave region. It was clear by the computer simulations and the experiments that the output power of gunn diodes at a frequency above 55GHz has been improved by using gradual substrate interface wafers. The gunn diodes, with a diamond heat sink delivered 220mW cw output power with 3.5% efficiency in the frequencies from 50 GHz to 60 GHz and 160mW with 3% efficiency at 65GHz. The gunn diodes operated at a bulk temperature rise of less than 150°C in a maximum output power operating condition. The AM noise (N/C) SSB of the 65GHz stabilized gunn oscillator was -165/1Hz BW at 1MHz off the carrier.
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