Abstract
A 16-ns 1-Mb CMOS EPROM has been developed utilizing high-speed circuit technology and a double-metal process. In order to achieve the fast access time, a differential sensing scheme with address transition detection (ATD) is used. A double-word-line structure is used to reduce word-line delay. High noise immunity is obtained by a bit-line bias circuit and data-latch circuit. Sufficient threshold voltage shift (indispensable for fast access time) is guaranteed by a threshold monitoring program (TMP) scheme. The array is organized as 64 K*16 b, which is suitable for 32-b high-performance microprocessors. The active power is 425 mW, the programming time is 100 mu s, and the chip size is 4.94*15.64 mm/sup 2/.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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