A 13.5-dBm 1-V Power Amplifier for W-Band Automotive Radar Applications in 28-nm FD-SOI CMOS Technology

Abstract

This article presents a $W$ -band power amplifier (PA) for automotive radar applications. It was designed in a 28-nm fully depleted silicon-on-insulator CMOS technology with a transition frequency of around 270 GHz and a standard back-end-of-line. The circuit adopts a pseudo-differential topology with coupling transformers, which allow both compact matching networks and layout-optimized interstage interconnections. The power stage exploits a transformer-based folded-cascode structure that is very suitable for low-voltage mm-wave power applications. The PA is able to deliver a saturated output power as high as 13.5 dBm at 77 GHz with a power-added efficiency of 14.5%, while using a power supply as low as 1 V. The linear power gain is 26.5 dB and the current consumption is 150 mA. The PA occupies a core die size of $700\,\,\mu \text{m}\,\,\times 200\,\,\mu \text{m}$ .