A 1.2-V 8-mW 2.4-GHz CMOS RF Receiver IC for Low Power WPAN

Abstract

A low power CMOS receiver IC operating at 2.4 GHz and supply voltage of 1.2 V in 0.18 mum CMOS process is reported This is based on single IF direct conversion receiver (DCR) and thus suitable for silicon integration. Single IF DCR architecture is used to achieve higher level of integration and to relax the problem of DCR. In the proposed receiver, linearity is improved by using current mirror amplifier based mixer and transconductance linearization using multiple gated transistors. The optimization between dynamic range and current consumption has been achieved by the analog filter-amplifier chain. The fully integrated receiver was fabricated in 0.18 mum CMOS technology and IIP3 of -29 dBm and noise figure of 9.6 dB at high gain mode were obtained at 8 mW power consumption from a 1.2 V supply.