Abstract
In this letter, a 125–143-GHz frequency-reconfigurable BiCMOS compact low-noise amplifier (LNA) is presented for the first time. It consists of two cascode stages and was fabricated using a 0.13- $\mu \text{m}$ SiGe:C BiCMOS process, which integrates RF-MEMS switches. A systematic general design procedure to obtain a balanced gain and noise figure in both frequency states is proposed. The LNA size is minimized by using only one RF-MEMS switch to select the frequency band and a multimodal three-line microstrip structure in the input matching network. The measured gain and noise figure are 18.2/16.1 and 7/7.7 dB at 125/143 GHz. The power consumption is 36.8 mW. The measured results are in good agreement with simulations.
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