Abstract
Two medium-power 12-18 GHz GaAs FET amplifiers, one single-ended and one balanced, have been developed. A minimum output power across the Ku-band of 200 mW with an associated gain of 4.0 dB was achieved with the balanced module. The transistor used in this study has gate dimensions of 300/spl times/1/spl mu/m. The technology, RF performance, and characterization of the transistor are discussed in detail, as are the design and performance of both single-ended and balanced amplifier modules.
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