A 12 bit monolithic IC D to A converter : V. O'Donoghue, Microelectronics, July (1970), p. 19

Abstract

An analytical model is presented for the specific contact resistance and shown to be applicable for metal-semiconductor contacts consisting of titanium silicide (TiSi2) on n and p-type silicon. The model includes the influence of field emission and thermionic-field emission in a unified manner, requiring only one simple relation for determination of specific contact resistance when either of these conduction mechanisms dominates. Previously, depending on field emission or thermionic-field emission dominating, separate analytical models, consisting of different relations for the specific contact resistance, have been derived. Moreover, these derivations generally have resulted in rather complex expressions, with complicated terms that are not readily amenable for easy analysis and physical understanding. The present model, while simpler in form, captures the main elements affecting specific contact resistance as influenced by thermionic-field emission and field emission and compares well with experimental results for TiSi2Si contacts. The model is also applicable for other metal-semiconductor contacts, and has been used to generate theoretical curves for specific contact resistance doping concentration, for a range of barrier heights, for metal-silicon contacts. Moreover, due to its simpler form, this model may be conveniently used for extracting model parameters from experimental data, if necessary and it can be easily implemented and used in process and/or device simulation programs.