A 100 mA class ion implanter for large scale production of buried oxide SOI wafers

Abstract

A new, fully automated, ion implanter suitable for large scale production of buried oxide wafers is presented. Novel solutions are employed to provide low cost, high quality, buried oxide with broad process range. Substrate temperatures are controlled between 400 and 750°C with a baseline 200 keV, 100 mA beam specification. By using a multiple beam filamentless source and robotic wafer handling, uniform low contamination specification wafers can be produced consistant with VLSI, class 1 to class 10 conditions. Typical throughput of 10 000 inch 2 per week (approximately 1000 wafers) can be obtained by careful beam utilization and the wafer cost less than 20% of those implanted on a 5 mA machine.