Abstract
A CMOS lock-in pixel image sensor with embedded storage diodes and lateral electric field modulation (LEFM) of photo-generated charge is developed for fluorescence lifetime imaging. The time-resolved CMOS image sensor (CIS) with twotap lock-in pixels achieves a very high time resolution of 10 ps when images are averaged over 30 frames, a very short intrinsic response time of 180 ps at 374 nm, and a low temporal random noise of 1.75e <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rms</sub> with true correlated double sampling (CDS) operation. In addition, by using the LEFM and optimized process, a very high extinction ratio of approximately 94% at 472 nm laser diode is achieved. The usefulness of the proposed CIS is demonstrated for fluorescence lifetime imaging with the simulation and measurement results.
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