A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography (Adv. Electron. Mater. 12/2021)

Abstract

Short-Cannel MoS2 Transistors Yi Yang, He Tian, Xing Wu, Tian-Ling Ren, and colleagues demonstrate a photolithography resolution-independent method to realize 10 nm short-channel MoS2 transistors in article 2100543. By depositing the noble electrode partially on the self-oxidized aluminum electrode, the channel length is directly defined by the ≈10 nm thickness of oxidization layer, which can provide new opportunities for scaling down 2D materials-based transistors.