Abstract
A broadband, high-efficiency MMIC power amplifier has been developed using AlGaAs-GaAs heterojunction bipolar transistors (HBTs). At 7-V collector bias, the fully matched monolithic amplifier produced 31-dBm CW peak output power with 9.2-dB peak gain and 50% peak power-added efficiency in the 8-15-GHz band. Several amplifiers from five different wafers have ben successfully tested. >
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