A 1 V 25 to 30 GHz three‐stage linear CMOS power amplifier using driver stage RF predistortion technique

Abstract

AbstractThis article presents a three‐stage 25 to 30 GHz linear CMOS power amplifier (PA) for fifth‐generation (5G) applications. In order to improve the linearity by compensating AM‐AM/AM‐PM distortion, we propose a driver stage RF predistortion technique in which a first drive amplifier (DA) operates in class C mode and a second DA operates in class A mode. By enhancing the linearity with the technique, the PA can be operated at more deep class‐AB bias condition with less back‐off. As a result, the efficiency of the PA at operating output power can thus be increased. The PA with the predistortion technique is designed and fabricated in bulk 65 nm 1 V CMOS process. The linear PA achieves 16.9 dBm Psat with 34.5% power‐added efficiency (PAE) and 15.9 dBm P1dB with 32% PAE at 27 GHz. At an average power of 9.3 dBm, the PA achieves the EVM of −25 dBc and PAE of 11.4% at 27 GHz.