Abstract
This article gives a detailed presentation of an all-npn silicon bipolar Track&Hold IC for 10-b operation up to 1 GSample/s under full Nyquist conditions. Circuit techniques were implemented to reduce the pedestal, hold-mode feedthrough, and droop errors. An experimental Track&Hold IC was fabricated in a 25-GHz-f/sub T/, 0.4-/spl mu/m-emitter-width single-poly base silicon bipolar production technology. Each of the Track&Hold circuits in this IC consists of 103 active devices and consumes 490 mW from a single supply voltage, including bandgap-references and input buffers.
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