Abstract
A 1 µm VLSI process technology has been developed for the fabrication of bipolar circuits. The process employs e-beam slice writing, plasma processing, ion implantation and low temperature diffusion/annealing to fabricate bipolar device structures with a minimum feature size of 0.9 µm. The process has been demonstrated by building a scaled LSI, I2L microprocessor chip (SBP0400) with a minimum feature size of 1 µm. The process technology is discussed; I2L performance and density as a function of minimum line width is given.
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