Abstract
This letter presents a high-isolation absorptive 1.9 GHz on-off keying (OOK) modulator in 90 nm CMOS process. The RF leakage-canceling technique is developed to suppress the RF leakage by combining it with its inverse replica at the output. The transform-typed baluns are used for the input and output matching such that the modulator input and output return losses change only slightly between the on and off states. The measured off-isolation of the CMOS OOK modulator is higher than 39.2 dB and the modulator has the on-state signal gain of 3.6 dB.
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