Abstract

A two-stage 6-18-GHz high-efficiency AlGaAs-GaAs HBT MMIC power amplifier has been designed and tested. At 7-V collector bias, this fully matched monolithic amplifier delivered an output power of 1.8+or-0.6 W over the band. The peak output power was 2.45 W at 13 GHz with an associated gain of 11.1 dB and 36.7% power-added efficiency (PAE). Amplifiers from five different wafers showed similar performance.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

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