Abstract
ABSTRACTA high efficiency dual band 50W GaN HEMT power amplifier is presented at 1.8 GHz and 2.6 GHz. An impedance matching network of the dual band amplifier at the fundamental and second harmonic frequencies is constructed to obtain wide bandwidth characteristics with reduction of sensitivity to impedance variation with frequency fluctuations. The matching network is composed of a three‐stage transmission line and an open‐ended stub with low Q‐factors. A T‐type DC bias line is performed to control impedances at second harmonic frequencies. From the measured results, the proposed dual band GaN HEMT amplifier achieved a minimum of 55% efficiency at 1.8 GHz and 2.6 GHz with a 300 MHz bandwidth for a maximum output power of 47 dBm. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2496–2500, 2016
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