A 1.46–1.96-dB-NF 2.1–5.2-GHz Wideband Passive Balun LNA in 22-nm CMOS

Abstract

This brief presents a CMOS wideband passive balun low noise amplifier (LNA) based on magnetically coupled resonator (MCR) matching network. The theoretical analysis, expression derivation and simulation verification of the impedance rise with frequency of MCR matching network is presented for the first time. The proposed wideband LNA was fabricated in 22-nm CMOS technology, which achieves a maximum power gain of 15.7 dB, noise figure (NF) of 1.46-1.96 dB. The 3-dB bandwidth ranges from 2.1-5.2 GHz. The minimum power input at 1dB compression point (IP1dB) is -15.2 dBm. The LNA core area is 0.38 mm2 and dissipates a total power of 16 mW from 1 V power supply.