Abstract
A 1–42 GHz gain-variable distributed amplifier is presented in the letter using a 0.13- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> gallium nitride (GaN) process. The amplifier can achieve a gain tuning range of about 3 dB over the entire frequency band by voltage-controlled switching. The chip area of the amplifier is about <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.9\times1.1$ </tex-math></inline-formula> mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The average output power of the amplifier is greater than 27.5 dBm over the entire bandwidth. A wider gain tuning range can be achieved by adding more voltage-controlled switches.
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