Abstract

This paper describes a bandgap reference that outputs a fraction of the silicon bandgap voltage. To simplify the design of an internal operational amplifier, the reference drives the base voltages on substrate transistors through unity-gain buffers to a fraction of a diode drop. With a 1.4 V supply, the reference produces an output of about 858 mV, which varies by 1.28 mV from -20degC to 100degC. It dissipates 162 muW and occupies 1.2 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> in 0.35 mum CMOS.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call