Abstract
This paper proposed a new high-order curvature compensation technique for a new bandgap voltage reference structure using the temperature characteristics of current gain β and emitter bandgap narrowing factor ΔE G of a lateral NPN bipolar transistor. The new structure can produce two voltage references, which are 1.209 and 2.418 V, respectively. The simulation results show that the temperature coefficients of the two output voltage are 0.52 ppm/°C, the PSRR is more than 60 dB for frequencies at 10 kHz, and the circuit dissipates 0.18 mW with 5-V supply.
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