A 0.35μm Low-Noise Stable Charge Sensitive Amplifier for Silicon Detectors Applications

Mohammad Arif Sobhan Bhuiyan

doi:10.33180/infmidem2020.101

Abstract

The Charge Sensitive Amplifier (CSA) is the key module of the front-end electronics of various types of Silicon detectors and most radiation detection systems. High gain, stability, and low input noise are the major concerns of a typical CSA circuit in order to achieve amplified susceptible input charge (current) for further processing. To design such a low-noise, stable, and low power dissipation solution, a CSA is required to be realized a complementary metal-oxide-semiconductor (CMOS) technology with a compact design. This research reports a low-noise highly stabile CSA design considerations for Silicon detectors applications, which has been designed and validated in TSMC 0.35um CMOS process. In a typical CSA design, the detector capacitance and the input transistor’s width are the most dominating parameters for achieving low noise performance. Therefore, the Equivalent Noise Charge (ENC) with respect to those parameters has been optimized, for a set of detector capacitance from 0.2pF – 2pF. However, the parallel noise of the feedback was removed by adopting a voltage-controlled NMOS resistor, which in turn helped to achieve high stability of the circuit. The simulation results provided a baseline gain of 9.92mV/fC and show that ENC was found to be 42.5e – with 3.72 e – /pF noise slope. The Corner frequency exhibited by the CSA is 1.023GHz and the output magnitude was controlled at -56.8dB; it dissipates 0.23mW from with a single voltage supply of 3.3V with an active die area of 0.0049 mm 2 .

Highlights

The Modern Front-End Electronics (FEE) for High Energy Physics Experiment (HEPE) are mixed-signal circuits in which the ultimate performance is set by the analog circuit applied to Solid State Detectors
The proposed Charge Sensitive Amplifier (CSA) circuit performance was verified using LTspice simulator and the layout was implemented in 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology process from TSMC, using Electric Very Large Scale Integration (VLSI), which is an open source tool for integrated circuit design
It is controlled by the Ibias value for a feedback loop of Rf = 150 kΩ and Cf = 2 pF

Summary

Introduction

The Modern Front-End Electronics (FEE) for High Energy Physics Experiment (HEPE) are mixed-signal circuits in which the ultimate performance is set by the analog circuit applied to Solid State Detectors. Have been extensively used in order to quantify the energy and photon count of incident X-rays This type of detectors designed with a thick Si substrate is very useful for 2-D tracking in a high multiplicity environment because of the large charge collection area along with low anode capacitance [1]. Through going X-rays, create electron-hole pairs in the depletion zone of the detector and these charges drift towards the electrodes as illustrated in Fig.. This drift (current) creates the signal (voltage) which is very weak and must be amplified by a CSA connected to each strip

Methods

Results

Conclusion